Morphological changes of nanostructures on silicon induced by C₆₀-ion irradiation

We study morphological changes on the Si surface induced by C60 ion beam under various irradiation conditions. The fluence and incident energy of was 1 × 1016–1 1019 ions/m2 50 keV–9 MeV, respectively. beam’s angle to normal 0° or 60°. As a result in these variables, three types nanostructures were observed: concave convex, stringlike, ripple structures. Structure shapes sizes varied with parameters. Almost all cases showed convex structures at an 0°. At 60° angle, stringlike formed. Stringlike formed higher energy, while lower energy. found that both can form from sputtering thermal effects. formation string structure requires thicker amorphous layer proper balance annealing.